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InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Ronghua Wang1, Guowang Li1, Golnaz Karbasian1, Jia Guo1, Faiza Faria1, Zongyang Hu1, Yuanzheng Yue1, Jai Verma1, Oleg Laboutin2, Yu Cao2, Wayne Johnson2, Gregory Snider1, Patrick Fay1, Debdeep Jena1, and Huili (Grace) Xing1

1Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
2Kopin Corporation, Taunton, MA 02780, U.S.A.

(Received November 14, 2012; accepted December 5, 2012; published online December 21, 2012)

Depletion-mode high-electron-mobility transistors (HEMTs) with an 11 nm quaternary In0.13Al0.83Ga0.04N barrier and a 5 nm In0.05Ga0.95N channel on SiC substrates have been fabricated. The as-processed HEMT structure features a channel electron density of 2.08×1013 cm-2 and a mobility of 1140 cm2 V-1 s-1. A device with a 50-nm-long T-shaped gate shows a maximum output current density of 2.0 A/mm, a peak extrinsic DC transconductance of 690 mS/mm, and cut-off frequencies fT/fmax of 260/220 GHz at the same bias, representing a record high √fT·fmax of 239 GHz for InGaN channel HEMTs. ©2013 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/6/016503/
DOI: 10.7567/APEX.6.016503


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