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Spin-Transfer Switching and Thermal Stability in an FePt/Au/FePt Nanopillar Prepared by Alternate Monatomic Layer Deposition

Kay Yakushiji, Shinji Yuasa, Taro Nagahama, Akio Fukushima, Hitoshi Kubota, Toshikazu Katayama, and Koji Ando

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

(Received February 14, 2008; accepted March 12, 2008; published online April 4, 2008)

We fabricated a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicular anisotropy using the alternate monatomic layer deposition method. Nanopillars consisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n (n: the number of the alternation period) ferromagnetic layers and an Au spacer layer showed spin-transfer induced switching at room temperature. An average critical switching current density (Jc0) of 1.1×107 A/cm2 with a large thermal stability parameter (Δ) of 60 was obtained in a nanopillar with a free-layer thickness of 1.02 nm (n=3) and a pillar diameter of 110 nm. The ultrathin free-layer with high perpendicular anisotropy is effective to obtain both large Δ and small Jc. ©2008 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/1/041302/
DOI: 10.1143/APEX.1.041302


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