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Appl. Phys. Express 2 (2009) 021002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides

Hirokuni Asamizu, Makoto Saito, Kenji Fujito1, James S. Speck, Steven P. DenBaars, and Shuji Nakamura

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
1Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan

(Received October 21, 2008; accepted December 22, 2008; published online February 13, 2009)

Continuous-wave (CW) operations of semipolar (1 12 2) plane InGaN/GaN laser diodes (LDs) were demonstrated. The LD structures were grown on low extended defect density semipolar (1 12 2) GaN bulk substrates, using conventional metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The threshold current was 54 mA (6.5 kA/cm2) for the CW operation [39 mA (4.6 kA/cm2) for pulsed mode]. Stimulated emission was observed at 405.9 nm with a spectral line-width of 1 nm. These results indicate that semipolar (1 12 2) GaN is a promising orientation for the realization of blue-green and green LDs. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/021002/
DOI: 10.1143/APEX.2.021002
PACS: 85.35.Be, 85.60.Dw, 42.55.Px, 85.30.De


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