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Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

Masamitsu Haemori, Takahiro Nagata, and Toyohiro Chikyow

Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

(Received December 11, 2008; accepted April 30, 2009; published online May 29, 2009)

In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current–voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 103–104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance. ©2009 The Japan Society of Applied Physics

DOI: 10.1143/APEX.2.061401

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