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Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

Lixian Jiang, Hiroshi Naganuma, Mikihiko Oogane, and Yasuo Ando

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

(Received June 29, 2009; accepted July 2, 2009; published online July 17, 2009)

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics. ©2009 The Japan Society of Applied Physics

DOI: 10.1143/APEX.2.083002

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