Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Appl. Phys. Express 2 (2009) 083002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (1282K)| |Buy This Article|

Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

Lixian Jiang, Hiroshi Naganuma, Mikihiko Oogane, and Yasuo Ando

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

(Received June 29, 2009; accepted July 2, 2009; published online July 17, 2009)

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/083002/
DOI: 10.1143/APEX.2.083002
PACS: 75.47.De, 77.80.Fm, 85.75.-d, 85.75.Dd


|Full Text PDF (1282K)| |Buy This Article| Citation:

See Also:

References | Citing Articles (29)

  1. T. Miyazaki and N. Tezuka: J. Magn. Magn. Mater. 139 (1995) L231.
  2. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey: Phys. Rev. Lett. 74 (1995) 3273[APS].
  3. W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren: Phys. Rev. B 63 (2001) 054416[APS].
  4. J. Mathon and A. Umersky: Phys. Rev. B 63 (2001) 220403R[APS].
  5. S. Yuasa, A. Fukushima, T. Nagahama, K. Ando, and Y. Suzuki: Jpn. J. Appl. Phys. 43 (2004) L588[JSAP].
  6. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S.-H. Yang: Nat. Mater. 3 (2004) 862[CrossRef].
  7. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando: Nat. Mater. 3 (2004) 868[CrossRef].
  8. D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando: Appl. Phys. Lett. 86 (2005) 092502[AIP Scitation].
  9. J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno: Appl. Phys. Lett. 89 (2006) 232510[AIP Scitation].
  10. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno: Appl. Phys. Lett. 90 (2007) 212507[AIP Scitation].
  11. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno: Appl. Phys. Lett. 93 (2008) 082508[AIP Scitation].
  12. Z.-M. Zeng, X.-F. Han, W.-S. Zhan, Y. Wang, Z. Zhang, and S. Zhang: Phys. Rev. B 72 (2005) 054419[APS].
  13. T. Nozaki, N. Tezuka, and K. Inomata: Phys. Rev. Lett. 96 (2006) 027208[APS].
  14. K. Yakushiji, S. Mitani, K. Takanashi, and H. Fujimori: J. Appl. Phys. 91 (2002) 7038[AIP Scitation].
  15. S. Yuasa, T. Nagahama, and Y. Suzuki: Science 297 (2002) 234[Science].
  16. T. Niizeki, N. Tezuka, and K. Inomata: Phys. Rev. Lett. 100 (2008) 047207[APS].
|TOP|  |Previous Article|  |Table of Contents| |APEX Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information