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Appl. Phys. Express 2 (2009) 095002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

Gento Yamahata1, Tetsuo Kodera1, Hiroshi Mizuta2,3,4, Ken Uchida3,4, and Shunri Oda1,4

1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
2School of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
3Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
4SORST-JST, Chiyoda, Tokyo 102-0075, Japan

(Received June 24, 2009; accepted July 28, 2009; published online August 21, 2009)

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/095002/
DOI: 10.1143/APEX.2.095002
PACS: 73.63.-b, 73.63.Kv, 03.67.-a


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