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Appl. Phys. Express 2 (2009) 111003 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation

Alexander Sztein1, Hiroaki Ohta1, Junichi Sonoda1, Ashok Ramu2, John E. Bowers2, Steven P. DenBaars1,2, and Shuji Nakamura1,2

1Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
2Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

(Received September 9, 2009; accepted October 19, 2009; published online November 6, 2009)

Lateral thermoelectric devices were fabricated using c-plane GaN thin films grown on sapphire by MOCVD. The device design is appropriate for on-chip integration for power generation in the 1 V and tens of µA range. The fabricated devices were measured to have a maximum open circuit voltage of 0.3 V with a maximum output power of 2.1 µW (=0.15 V×14 µA) at a relatively small temperature difference (ΔT) of 30 K and an average temperature (Tavg) of 508 K. In addition, the suitability of GaN for high temperature thermoelectric applications was confirmed by measurements at 825 K. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/111003/
DOI: 10.1143/APEX.2.111003
PACS: 84.60.Rb, 73.61.Ey, 68.55.Ln, 72.20.Pa


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