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Continuous-Wave, Room-Temperature Operation of 2-µm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates

Thomas J. Rotter1,2, Jun Tatebayashi1, Pradeep Senanayake1, Ganesh Balakrishnan2, Marcel Rattunde3, Joachim Wagner3, Jörg Hader4, Jerome V. Moloney4, Stephan W. Koch5, L. Ralph Dawson2, and Diana L. Huffaker1

1California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095, U.S.A.
2Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.
3Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
4College of Optical Sciences, University of Arizona, Tucson, AZ 85721, U.S.A.
5Physics Department, University of Marburg, Renghof 5, 35032 Marburg, Germany

(Received September 17, 2009; accepted October 13, 2009; published online November 6, 2009)

We report on continuous-wave, room-temperature operation at 2.014 µm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5 °C. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/112102/
DOI: 10.1143/APEX.2.112102


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