Appl. Phys. Express 2 (2009) 121103 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Electric-Field Modulation of Thermopower for the KTaO3 Field-Effect Transistors

Akira Yoshikawa1, Kosuke Uchida1, Kunihito Koumoto1, Takeharu Kato2, Yuichi Ikuhara2,3, and Hiromichi Ohta1,4

1Graduate School of Engineering, Nagoya University, Furocho, Chikusa, Nagoya 464-8603, Japan
2Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
3Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan
4PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received November 4, 2009; accepted November 17, 2009; published online December 11, 2009)

We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field-effect mobility of ∼8 cm2 V-1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 µV K-1 by the application of gate electric field up to 1.5 MV cm-1, ∼400 µV K-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/121103/
DOI: 10.1143/APEX.2.121103
PACS: 72.20.Pa, 85.30.Tv, 73.50.Gr, 84.60.Rb


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References | Citing Articles (4)

  1. T. M. Tritt, M. A. Subramanian, H. Bottner, T. Caillat, G. Chen, R. Funahashi, X. Ji, M. Kanatzidis, K. Koumoto, G. S. Nolas, J. Poon, A. M. Rao, I. Terasaki, R. Venkatasubramanian, and J. Yang: MRS Bull. 31 (2006) 188, and articles therein.
  2. A. Sakai, T. Kanno, S. Yotsuhashi, H. Adachi, and Y. Tokura: Jpn. J. Appl. Phys. 48 (2009) 097002[JSAP].
  3. W. S. Baer: J. Phys. Chem. Solids 28 (1967) 677[CrossRef].
  4. W. R. Hosler and H. P. R. Frederikse: Solid State Commun. 7 (1969) 1443[CrossRef].
  5. M. Tsukioka, J. Tanaka, and Y. Miyazawa: J. Phys. Soc. Jpn. 46 (1979) 1785.
  6. G. O. Deputy and R. W. Vest: J. Am. Ceram. Soc. 61 (1978) 321[CrossRef].
  7. V. F. Shamrai, A. V. Arakcheeva, V. V. Grinevich, and A. B. Mikhailova: Crystallogr. Rep. 50 (2005) 779.
  8. S. H. Wemple: Phys. Rev. 137 (1965) A1575[APS].
  9. O. N. Tufte and P. W. Chapman: Phys. Rev. 155 (1967) 796[APS].
  10. H. P. R. Frederikse, W. R. Thurber, and W. R. Hosler: Phys. Rev. 134 (1964) A442[APS].
  11. H. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura, and H. Hosono: Appl. Phys. Lett. 95 (2009) 113505[AIP Scitation].
  12. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma: Science 266 (1994) 1540[Science].
  13. K. Ueno, I. H. Inoue, T. Yamada, H. Akoh, Y. Tokura, and H. Takagi: Appl. Phys. Lett. 84 (2004) 3726[AIP Scitation].
  14. K. Ueno, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, and H. Takagi: Appl. Phys. Lett. 83 (2003) 1755[AIP Scitation].
  15. H. Ohta, K. Sugiura, and K. Koumoto: Inorg. Chem. 47 (2008) 8429.
  16. C. B. Vining: J. Appl. Phys. 69 (1991) 331[AIP Scitation].

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