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Electric-Field Modulation of Thermopower for the KTaO3 Field-Effect Transistors
Akira Yoshikawa1,
Kosuke Uchida1,
Kunihito Koumoto1,
Takeharu Kato2,
Yuichi Ikuhara2,3, and
Hiromichi Ohta1,4
1Graduate School of Engineering, Nagoya University, Furocho, Chikusa, Nagoya 464-8603, Japan
2Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
3Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan
4PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan
(Received November 4, 2009; accepted November 17, 2009; published online December 11, 2009)
We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field-effect mobility of ∼8 cm2 V-1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 µV K-1 by the application of gate electric field up to 1.5 MV cm-1, ∼400 µV K-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.
©2009 The Japan Society of Applied Physics
URL:
http://apex.jsap.jp/link?APEX/2/121103/
DOI: 10.1143/APEX.2.121103
PACS: 72.20.Pa, 85.30.Tv, 73.50.Gr, 84.60.Rb
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