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Appl. Phys. Express 2 (2009) 122202 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Demonstration of a III–Nitride/Silicon Tandem Solar Cell

Lothar A. Reichertz1, Iulian Gherasoiu2, Kin Man Yu1, Vincent M. Kao1, Wladek Walukiewicz1,2, and Joel W. Ager III1

1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, CA 94720, U.S.A.
2RoseStreet Labs Energy, 3701 E. University Dr., Phoenix, AZ 85034, U.S.A.

(Received September 24, 2009; accepted November 19, 2009; published online December 11, 2009)

We report on the proof of principle of a III–nitride/silicon tandem solar cell. Photovoltaic activity is demonstrated in a 0.25 cm2 dual junction solar cell, made of p- and n-type GaN layers which were grown by molecular beam epitaxy (MBE) on a standard n-type Si wafer with an Al doped p-type surface. An open circuit voltage (Voc) of 2.4 V was measured under 1× sun AM1.5G condition with additional UV laser illumination of the GaN junction. Experiments under various illumination conditions were performed to verify that both junctions are active and working in series. ©2009 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/2/122202/
DOI: 10.1143/APEX.2.122202
PACS: 84.60.Jt, 88.40.H-, 72.40.+w, 73.40.Kp, 81.15.Hi


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