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Appl. Phys. Express 3 (2010) 011002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

Anurag Tyagi1, Robert M. Farrell1, Kathryn M. Kelchner1, Chia-Yen Huang2, Po Shan Hsu2, Daniel A. Haeger2, Matthew T. Hardy2, Casey Holder2, Kenji Fujito3, Daniel A. Cohen2, Hiroaki Ohta2, James S. Speck2, Steven P. DenBaars1,2, and Shuji Nakamura1,2

1Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
2Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
3Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

(Received November 19, 2009; accepted December 6, 2009; published online December 25, 2009)

We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates. The devices employed In0.06Ga0.94N waveguiding layers to provide transverse optical mode confinement. A maximum lasing wavelength of 506.4 nm was observed under pulsed operation, which is the longest reported for AlGaN-cladding-free III-nitride LDs. The threshold current density (Jth) for index-guided LDs with uncoated etched facets was 23 kA/cm2, and 19 kA/cm2 after application of high-reflectivity (HR) coatings. A characteristic temperature (T0) value of ∼130 K and wavelength red-shift of ∼0.05 nm/K were confirmed. ©2010 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/3/011002/
DOI: 10.1143/APEX.3.011002
PACS: 42.55.Xi, 81.05.Ea, 81.05.Ea, 81.15.Gh


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