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Contact Conductance Measurement of Locally Suspended Graphene on SiC
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
(Received February 24, 2010; accepted March 13, 2010; published online April 2, 2010)
The characteristics of suspended graphene membran structures formed by partial etching underneath SiC were revealed by using atomic force microscopy. The contact force dependence of topographic and electrical conductance images were measured with a metal (Rh) coated microprobe. The contact resistance value for locally suspended graphene was estimated to be about 80 µΩ cm2, which is 10000 times larger than that for surrounding graphene normally grown on SiC. The nonlinear current–voltage characteristics of the locally suspended graphene suggest tunneling junction formation between a metal nano-contact and suspended graphene.
©2010 The Japan Society of Applied Physics
PACS: 73.40.Lq, 81.65.Cf, 81.05.Hd, 81.05.ue
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