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Volatile/Nonvolatile Dual-Functional Atom Transistor

Tsuyoshi Hasegawa1,2, Yaomi Itoh1,2, Hirofumi Tanaka3, Takami Hino1, Tohru Tsuruoka1,2, Kazuya Terabe1, Hisao Miyazaki1, Kazuhito Tsukagoshi1, Takuji Ogawa3, Shu Yamaguchi2,4, and Masakazu Aono1

1WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
2Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan
3Department of Chemistry, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan
4Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

(Received November 19, 2010; accepted December 5, 2010; published online December 24, 2010)

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 104 times switching was achieved with the prototype. ©2011 The Japan Society of Applied Physics

DOI: 10.1143/APEX.4.015204
KEYWORDS:volatile/nonvolatile selective operations, atom transistor, highly-integrated CMOS, small power consumption, high ON/OFF ratio, Ta2O5 layer

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