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Appl. Phys. Express 4 (2011) 023002 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

Kotaro Mizunuma1, Michihiko Yamanouchi2, Shoji Ikeda1,2, Hideo Sato2, Hiroyuki Yamamoto3, Hua-Dong Gan2, Katsuya Miura1,2,3, Jun Hayakawa3, Fumihiro Matsukura1,2, and Hideo Ohno1,2

1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
2Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan
3Advanced Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

(Received December 15, 2010; accepted January 18, 2011; published online February 4, 2011)

The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-Ta annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side. ©2011 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/4/023002/
DOI: 10.1143/APEX.4.023002
PACS: 85.75.Dd, 75.30.Gw, 75.50.Bb, 75.47.Lx


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