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Appl. Phys. Express 4 (2011) 064105 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)

Diego Marti, C. R. Bolognesi, Yvon Cordier1, Magdalena Chmielowska1, and Mohammed Ramdani1

Millimeter-Wave Electronics Group, ETH-Zürich, Gloriastrasse 35, CH-8092 Zürich, Switzerland
1Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

(Received April 30, 2011; accepted May 14, 2011; published online June 2, 2011)

We report the first microwave performance for AlGaN/GaN HEMT structures grown by molecular beam epitaxy on Si(110) high-resistivity substrates. Transistors were fabricated with gate lengths of 50, 75, and 100 nm, achieving short-circuit current cutoff frequencies as high as fT = 70 GHz and maximum oscillation frequencies of fMAX(U) = 93 GHz. Because complementary metal–oxide–semiconductor (CMOS) technology is compatible with (110) substrates, this demonstration establishes a foundation for the future integration of GaN devices into mainstream CMOS on a common Si(110) platform. ©2011 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/4/064105/
DOI: 10.1143/APEX.4.064105
PACS: 85.30.Tv, 81.15.Hi, 81.05.Ea, 85.30.De, 73.40.Qv


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