Appl. Phys. Express 4 (2011) 096502 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (847K)| |Buy This Article|

Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

Ronghua Wang, Guowang Li, Jai Verma, Tom Zimmermann, Zongyang Hu, Oleg Laboutin1, Yu Cao1, Wayne Johnson1, Xiang Gao2, Shiping Guo2, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili (Grace) Xing

Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
1Kopin Corporation, Taunton, MA 02780, U.S.A.
2IQE RF LLC, Somerset, NJ 08873, U.S.A.

(Received July 16, 2011; accepted August 14, 2011; published online August 29, 2011)

The effects of recess etch in alloyed ohmic contacts have been studied on InAl(Ga)N/AlN/GaN high-electron-mobility transistors (HEMTs) using a Si-containing ohmic metal stack. The optimized contact resistance is as low as 0.23 Ω mm. With decent ohmic contacts, an In0.13Al0.83Ga0.04N barrier HEMT with a 66-nm long gate and dielectric-free passivation followed by a 5 nm Al2O3 deposition, shows a maximum drain current density Idmax of 2.3 A/mm, a peak extrinsic transconductance gmext of 560 mS/mm and a current gain cut-off frequency fT of 210 GHz, which are among the highest reported values in quaternary InAlGaN/AlN/GaN HEMTs. ©2011 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/4/096502/
DOI: 10.1143/APEX.4.096502


|Full Text PDF (847K)| |Buy This Article| Citation:


References | Citing Articles (2)

  1. T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, and H. Xing: IEEE Electron Device Lett. 29 (2008) 661[CrossRef].
  2. I. Milosavljevic, K. Shinohara, D. Regan, S. Bumham, A. Corrion, P. Hashimoto, D. Wong, M. Hu, C. Butler, A. Schmitz, P. J. Wiladsen, and M. Micovic: IEEE DRC Dig., 2010, p. 159.
  3. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, and C. R. Bolognesi: IEEE Electron Device Lett. 31 (2010) 957[CrossRef].
  4. R. Wang, P. Sanier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing: IEEE Electron Device Lett. 31 (2010) 1383[CrossRef].
  5. R. Wang, P. Saunier, Y. Tang, T. Fang, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing: IEEE Electron Device Lett. 32 (2011) 309[CrossRef].
  6. T. Lim, R. Aidam, P. Waltereit, T. Henkel, R. Quay, R. Lozar, T. Maier, L. Kirste, and O. Ambacher: IEEE Electron Device Lett. 31 (2010) 671[CrossRef].
  7. R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing: IEEE Electron Device Lett. 32 (2011) 892[CrossRef].
  8. R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing: IEEE Electron Device Lett. 32 (2011) 1215[CrossRef].
  9. Y. Tang, P. Saunier, R. Wang, A. Ketterson, X. Gao, S. Guo, G. Snider, D. Jena, H. G. Xing, and P. Fay: IEDM Tech. Dig., 2010, p. 30.4.
  10. T. Zimmermann, Y. Cao, G. Li, G. Snider, D. Jena, and H. Xing: Phys. Status Solidi C 5 (2008) 2030[CrossRef].
  11. D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, P. Chavarkar, R. Coffie, N. Q. Zhang, S. Heikman, L. Shen, H. Xing, C. Zheng, and U. K. Mishra: IEEE Electron Device Lett. 23 (2002) 118[CrossRef].
  12. F. M. Mohammed, L. Wang, and I. Adesida: Appl. Phys. Lett. 87 (2005) 262111[AIP Scitation].
  13. N. Onojima, N. Hirose, T. Mimura, and T. Matsui: Appl. Phys. Express 1 (2008) 071101[JSAP].
  14. T. Zimmermann, Y. Cao, G. Li, G. Snider, D. Jena, and H. Xing: Phys. Status Solidi A 208 (2011) 1620.
  15. R. Jakiela, A. Barcz, E. Dumiszewska, and A. Jagoda: Phys. Status Solidi C 3 (2006) 1416[CrossRef].
  16. M. A. Miller and S. E. Mohney: Appl. Phys. Lett. 91 (2007) 012103[AIP Scitation].
  17. D. Maier, M. Alomari, N. Grandjean, J.-F. Carlin, M.-A. Diforte-Poisson, C. Dua, A. Chuvilin, D. Troadec, C. Gaquière, U. Kaiser, S. L. Delage, and E. Kohn: IEEE Trans. Device Mater. Reliab. 10 (2010) 427.
  18. R. Wang, G. Li, T. Fang, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing: IEEE DRC Dig., 2011, p. 139.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |APEX Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information