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Large-Area Parallel Ce Silicide Nanowire Array Self-Organized on Si(110) “16 ×2” Template
Ie-Hong Hong1,2,
Yung-Cheng Liao2, and
Yung-Feng Tsai2
1Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan
2Institute of Optoelectronics and Solid State Electronics, National Chiayi University, Chiayi 60004, Taiwan
(Received September 27, 2011; accepted October 22, 2011; published online November 8, 2011)
We present a large-scale self-organization of highly integrated parallel arrays, consisting of uniformly spaced epitaxial Ce silicide nanowires on a single-domain Si(110) “16 ×2” surface. Our scanning tunneling microscopy and spectroscopy studies show that each atomically regular Ce silicide nanowire comprises two semiconducting zigzag chains with different atomic structures. The possible origin of this semiconducting behavior is discussed. This large-area self-organization of the ultrahigh-density parallel Ce silicide nanowire array by using a single-domain Si(110) “16 ×2” nanotemplate can be employed as a simple and versatile method to achieve rational nanofabrication of other rare-earth silicide nanowire arrays for a broad range of device applications.
©2011 The Japan Society of Applied Physics
URL:
http://apex.jsap.jp/link?APEX/4/115003/
DOI: 10.1143/APEX.4.115003
PACS: 81.16.Dn, 68.37.Ma, 62.23.Hj, 61.46.Km
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