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Appl. Phys. Express 5 (2012) 045103 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Surface Potential Variations in Graphene Induced by Nanostructured Crystalline Ionic Substrates

Gavin J. Jones, Asieh Kazemi, Simon Crampin, Mick Phillips1, and Adelina Ilie

Department of Physics and Centre for Graphene Science, University of Bath, Bath BA2 7AY, United Kingdom
1Asylum Research UK Ltd., Bicester, OX26 4LD, United Kingdom

(Received January 3, 2012; accepted March 26, 2012; published online April 11, 2012)

We used electrostatic force and Kelvin probe microscopies to investigate few-layer graphene (FLG) domains on top of ionic crystals. Step edges, pits, and protrusions within the ionic surface create sizeable and local perturbations of the surface potential of graphene overlayers. These were within the eV range in FLG with up to three layers, and become considerably screened in thicker layers. Engineering such nanostructures in a regular manner can allow the bottom-up creation of on-sheet p–n junctions and superlattices that exploit the Dirac nature of carriers in graphene, and provide a test bed for studying local screening. ©2012 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/5/045103/
DOI: 10.1143/APEX.5.045103
PACS: 61.48.Gh, 68.55.am, 68.37.Ps


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References

  1. J. R. Williams, T. Low, M. S. Lundstrom, and C. M. Marcus: Nat. Nanotechnol. 6 (2011) 222.
  2. C.-H. Park, Y.-W. Son, L. Yang, M. L. Cohen, and S. G. Louie: Nano Lett. 8 (2008) 2920[CrossRef].
  3. J. R. Williams, L. DiCarlo, and C. M. Marcus: Science 317 (2007) 638.
  4. H.-C. Cheng, R.-J. Shiue, C.-C. Tsai, W.-H. Wang, and Y.-T. Chen: ACS Nano 5 (2011) 2051.
  5. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone: Nat. Nanotechnol. 5 (2010) 722.
  6. C. Staii, A. T. Johnson, and N. J. Pinto: Nano Lett. 4 (2004) 859[CrossRef].
  7. J. M. Weaver and D. W. Abraham: J. Vac. Sci. Technol. B 9 (1991) 1559[AIP Scitation].
  8. S. S. Datta, D. R. Strachan, E. J. Mele, and A. T. Charlie Johnson: Nano Lett. 9 (2009) 7[CrossRef].
  9. T. Burnett, R. Yakimova, and O. Kazakova: Nano Lett. 11 (2011) 2324[CrossRef].
  10. S. Kurbanov, W. C. Yang, and T. W. Kang: Appl. Phys. Express 4 (2011) 021101[JSAP].
  11. M. Luna, F. Rieutord, N. A. Melman, Q. Dai, and M. Salmeron: J. Phys. Chem. A 102 (1998) 6793[CrossRef].
  12. M. Dorn, P. Lange, A. Chekushin, N. Severin, and J. P. Rabe: J. Appl. Phys. 108 (2010) 106101[AIP Scitation].
  13. P. Girard: Nanotechnology 12 (2001) 485[IoP STACKS].
  14. M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi: Appl. Phys. Express 3 (2010) 045101[JSAP].
  15. R. Hoffmann: Dr. Thesis, Faculty of Science, University of Basel, Basel (2001).
  16. M. Goryl, F. Buatier de Mongeot, F. Krok, A. Vevecka-Priftaj, and M. Szymonski: Phys. Rev. B 76 (2007) 075423[APS].
  17. R. Bennewitz, A. S. Foster, L. N. Kantorovich, M. Bammerlin, Ch. Loppacher, S. Schaer, M. Guggisberg, E. Meyer, and A. L. Shluger: Phys. Rev. B 62 (2000) 2074[APS].
  18. R. Yakimova group: private communication.
  19. N. Kitamura, A. Oshiyama, and O. Sugino: J. Phys. Soc. Jpn. 67 (1998) 3976.
  20. M. A. Kuroda, J. Tersoff, and G. J. Martyna: Phys. Rev. Lett. 106 (2011) 116804[APS].
  21. P. B. Visscher and L. M. Falicov: Phys. Rev. B 3 (1971) 2541[APS].
  22. L. Nony, E. Gnecco, A. Baratoff, A. Alkauskas, R. Benenewitz, O. Pfeiffer, S. Maier, A. Wetzel, E. Mayer, and Ch. Gerber: Nano Lett. 4 (2004) 2185[CrossRef].
  23. T. Glatzel, L. Zimmerli, S. Kawai, E. Meyer, L.-A. Fendt, and F. Diederich: Beilstein J. Nanotechnol. 2 (2011) 34.
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