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A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, and Hideki Yamamoto

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

(Received May 22, 2012; accepted June 7, 2012; published online June 27, 2012)

We have successfully released an InGaN/GaN light-emitting diode (LED) from a sapphire growth substrate and transferred it to a piece of commercially available adhesive tape using a mechanical transfer method called “MeTRe” (Mechanical Transfer using a Release layer). By this method, a 3-nm-thick hexagonal BN (h-BN) layer inserted between the sapphire substrate and the GaN-based layer acts as both a buffer layer for the growth of a high-quality GaN-based layer and a release layer in the transfer process. A very thin (<0.1 mm) vertical LED prototype wrapped with two pieces of adhesive tape emitted violet-blue light. ©2012 The Japan Society of Applied Physics

URL: http://apex.jsap.jp/link?APEX/5/072102/
DOI: 10.1143/APEX.5.072102


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