Appl. Phys. Express 5 (2012) 072102 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (440K)| |Buy This Article|

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, and Hideki Yamamoto

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

(Received May 22, 2012; accepted June 7, 2012; published online June 27, 2012)

We have successfully released an InGaN/GaN light-emitting diode (LED) from a sapphire growth substrate and transferred it to a piece of commercially available adhesive tape using a mechanical transfer method called “MeTRe” (Mechanical Transfer using a Release layer). By this method, a 3-nm-thick hexagonal BN (h-BN) layer inserted between the sapphire substrate and the GaN-based layer acts as both a buffer layer for the growth of a high-quality GaN-based layer and a release layer in the transfer process. A very thin (<0.1 mm) vertical LED prototype wrapped with two pieces of adhesive tape emitted violet-blue light. ©2012 The Japan Society of Applied Physics

DOI: 10.1143/APEX.5.072102

|Full Text PDF (440K)| |Buy This Article| Citation:


  1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112[JSAP].
  2. S. Nakamura, T. Mukai, and M. Senoh: Jpn. J. Appl. Phys. 30 (1991) L1998[JSAP].
  3. I. Akasaki, H. Amano, and H. Murakami: J. Cryst. Growth 128 (1993) 379[CrossRef].
  4. Y. Taniyasu, M. Kasu, and T. Makimoto: Appl. Phys. Lett. 89 (2006) 182112[AIP Scitation].
  5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74[JSAP].
  6. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano: Electron. Lett. 32 (1996) 1105[AIP Scitation].
  7. M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson: Appl. Phys. Lett. 63 (1993) 1214[AIP Scitation].
  8. T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo: Appl. Phys. Lett. 76 (2000) 121[AIP Scitation].
  9. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara: IEEE Electron Device Lett. 24 (2003) 289[CrossRef].
  10. Y.-F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 2181[CrossRef].
  11. T. Makimoto, K. Kumakura, and N. Kobayashi: Appl. Phys. Lett. 83 (2003) 1035[AIP Scitation].
  12. K. Kumakura and T. Makimoto: Appl. Phys. Lett. 86 (2005) 023506[AIP Scitation].
  13. X. Chen, K. D. Matthews, D. Hao, W. J. Schaff, and L. F. Eastman: Phys. Status Solidi A 205 (2008) 1103[CrossRef].
  14. Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto: Nature 484 (2012) 223[CrossRef].
  15. W. S. Wong, T. Sand, and N. W. Cheung: Appl. Phys. Lett. 72 (1998) 599[AIP Scitation].
  16. M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Görgens, O. Ambacher, and M. Stutzmann: Jpn. J. Appl. Phys. 38 (1999) L217[JSAP].
  17. J.-H. Ahn, J.-H. Ahn, H.-S. Kim, K. J. Lee, S. Jeon, S. J. Kang, Y. Sun, R. G. Nuzzo, and J. A. Rogers: Science 314 (2006) 1754[Science].
  18. K. J. Lee, M. A. Meitl, J.-H. Ahn, J. A. Rogers, R. G. Nuzzo, V. Kumar, and I. Adesida: J. Appl. Phys. 100 (2006) 124507[AIP Scitation].
  19. D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi: Appl. Phys. Lett. 91 (2007) 071120[AIP Scitation].
  20. J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao: IEEE Photonics Technol. Lett. 20 (2008) 175[CrossRef].
  21. K. Chung, C.-H. Lee, and G.-C. Yi: Science 330 (2010) 655.
  22. C.-Y. Cho, S.-J. Lee, S.-H. Hong, S.-C. Park, S.-E. Park, Y. Park, and S.-J. Park: Appl. Phys. Express 4 (2011) 012104[JSAP].
  23. M.-S. Lin, C.-F. Lin, W.-C. Huang, G.-M. Wang, B.-C. Shieh, J.-J. Dai, S.-Yi. Chang, D. S. Wuu, P.-L. Liu, and R.-H. Horng: Appl. Phys. Express 4 (2011) 062101[JSAP].
  24. Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto, and N. Matsumoto: Jpn. J. Appl. Phys. 46 (2007) 2554[JSAP].
  25. Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, and N. Matsumoto: J. Cryst. Growth 298 (2007) 325[CrossRef].
  26. Y. Kobayashi and T. Akasaka: J. Cryst. Growth 310 (2008) 5044[CrossRef].
  27. Y. Kobayashi, C.-L. Tsai, and T. Akasaka: Phys. Status Solidi C 7 (2010) 1906[CrossRef].
  28. U. Tisch, B. Meyler, O. Katz, E. Finkman, and J. Salzman: J. Appl. Phys. 89 (2001) 2676[AIP Scitation].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |APEX Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information